page:p1 - p 1 plastic - encapsulate trans istors guangdong hottech industrial co,. ltd. fe a tures epitaxial planar die construction. ultra - small surface mount package. m arki ng: m1j maximum ratings (ta=25 unless otherwise noted) par a met e r symbol v alue uni t col l ect or - ba s e v o l t age v cbo 4 0 v col l ector - emitter v o l t age v ceo 15 v emitter - base v o l t a g e v ebo 4.5 v col l ector cur re n t - conti n u o us i c 200 m a col l ector p o w e r dissi p a t i on p c 3 00 m w juncti o n t emperature t j 150 s torage t e mp e rature t stg - 55 to +150 electrical characteristics (tamb=25 unless otherwise specified) parameter s y mbol test conditions m in m ax u nit collector - b as e breakdo w n voltage v cbo i c =10a i e =0 40 v collector - e m itter breakd o wn volta g e v ceo i c =10ma i b =0 15 v emitter - base breakdo w n voltage v ebo i e =10a i c =0 4.5 v collector cut - off current i cbo v c b =20v i e =0 0.4 u a dc c urrent g ain h fe v c e =1.0v i c =10ma 40 120 v c e =2.0v i c =100ma 20 collector - e m itter saturation voltage v ce(s a t ) i c =10ma i b =1.0ma 0.25 v output capacitance c obo v c e =5.0 v , i e =0,f=1.0mh z 4.0 pf small signal current gain h fe i c =10ma,v c e =1 0 v , f=100mhz 5.0 storage time t s i b1 =i b2 =i c =10ma 13 ns turn - o n time t on v cc =3 v , i c =10ma, i b 1 =3ma 12 ns turn - off time t o f f v cc =3 v , i c =10ma, i b 1 =3ma i b2 =1.5ma 18 ns ( npn ) 1. base 2. emitter sot - 23 3. collecto MMBT2369
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